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Silicon carbide ceramic EBSD samples preparation

#SiCCeramic #EBSD #MetallographicSamplePrep #SemiconductorMaterial #MaterialTesting

Silicon carbide (SiC) ceramics feature outstanding thermal conductivity, high-temperature resistance, wear and corrosion resistance, widely adopted in semiconductor manufacturing, new-energy PV, aerospace thermal protection and high-temperature metallurgy. Their service performance is dominated by grain morphology, grain boundary conditions and residual stress.

EBSD serves as an essential characterization method to analyze grain orientation, texture and micro-defects of SiC. Reliable EBSD data guides sintering optimization and avoids component failure. Precise specimen preparation determines EBSD indexing success for hard & brittle SiC ceramics. Standard sandpapers fail grinding; diamond discs plus vibratory polishing are required.

Silicon carbide ceramic EBSD sample preparation micrograph 1

Figure 1: Silicon carbide (SiC) ceramic sample micrograph (Scale: 300μm)

Silicon carbide ceramic EBSD sample preparation micrograph 2

Figure 2: Silicon carbide (SiC) ceramic sample micrograph (Scale: 300μm)

Our SiC EBSD Prep Procedure:

1️⃣ Rough grinding with P400 diamond disc for planarization
2️⃣ Fine grinding: POS pad + 9μm PD-WT diamond suspension
3️⃣ Rough polishing: SC-JP cloth + 3μm PD-WT suspension
4️⃣ Intermediate polishing: ZN-ZP cloth + AO-A439 suspension
5️⃣ Final vibratory polishing: ZN-ZP cloth + AO-A439 suspension
#Trojan | #Trojanmetallography

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